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BUK75/7610-55AL
N-channel TrenchMOSTM standard level FET
Rev. 01 -- 31 March 2005 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive (GPA) TrenchMOSTM technology specifically optimized for linear operation.
1.2 Features
s TrenchMOSTM technology s 175 C rated s Q101 compliant s Stable operation in linear mode.
1.3 Applications
s Automotive systems s DC linear motor control s Repetitive clamped inductive switching s 12 V and 24 V loads.
1.4 Quick reference data
s EDS(AL)S 1.1 J s ID 75 A s RDSon = 8.5 m (typ) s Ptot 300 W.
2. Pinning information
Table 1: 1 2 3 mb Pinning Simplified outline
mb mb
Pin Description gate (G) drain (D) source (S) mounting base; connected to drain (D)
Symbol
D
G
mbb076
S
2 1 3
SOT404 (D2PAK)
123
SOT78 (TO-220AB)
Philips Semiconductors
BUK75/7610-55AL
N-channel TrenchMOSTM standard level FET
3. Ordering information
Table 2: Ordering information Package Name BUK7510-55AL BUK7610-55AL TO-220AB D2PAK Description Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78 Type number
Plastic single-ended surface mounted package (D2PAK); 3 leads (one lead SOT404 cropped)
4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS = 10 V; Figure 2 and 3 Tmb = 100 C; VGS = 10 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM peak drain current total power dissipation storage temperature junction temperature reverse drain current (DC) peak reverse drain current Tmb = 25 C Tmb = 25 C; pulsed; tp 10 s unclamped inductive load; ID = 75 A; VDS 55 V; RGS = 50 ; VGS = 10 V; starting at Tj = 25 C
[1] [3] [2] [1] [3] [2] [2]
Conditions RGS = 20 k
Min -55 -55 -
Max 55 55 20 122 75 75 490 300 +175 +175 122 75 490 1.1
Unit V V V A A A A W C C A A A J
Tmb = 25 C; pulsed; tp 10 s; Figure 3 Tmb = 25 C; Figure 1
Source-drain diode
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy EDS(AL)R repetitive drain-source avalanche energy
[1] [2] [3] [4] a) b) c) d) Max value not quoted. Repetitive rating defined in Figure 16. Single-shot avalanche rating limited by Tj(max) of 175 C. Repetitive avalanche rating limited by Tj(avg) of 170 C. Refer to application note AN10273 for further information. Current is limited by power dissipation chip rating. Continuous current is limited by package. Refer to document 9397 750 12572 for further information.
-
[4]
-
9397 750 14362
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 31 March 2005
2 of 14
Philips Semiconductors
BUK75/7610-55AL
N-channel TrenchMOSTM standard level FET
120 Pder (%) 80
03aa16
150 ID (A) 100
(1)
003aaa726
40
50
0 0 50 100 150 Tmb (C) 200
0 0 50 100 150 Tmb (C) 200
P tot P der = ---------------------- x 100 % P
tot ( 25 C )
VGS 5 V (1) Capped at 75 A due to package.
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
103 ID (A) 102
(1)
Fig 2. Continuous drain current as a function of mounting base temperature.
003aaa737
Limit RDSon = VDS / ID
tp = 10 s
100 s
1 ms DC 10 10 ms 100 ms
1 1 10 VDS (V)
102
Tmb = 25 C; IDM is single pulse. (1) Capped at 75 A due to package.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 14362
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 31 March 2005
3 of 14
Philips Semiconductors
BUK75/7610-55AL
N-channel TrenchMOSTM standard level FET
5. Thermal characteristics
Table 4: Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient SOT78 (TO-220AB) SOT404 (D2-PAK) vertical in free air mounted on a printed-circuit board; minimum footprint; vertical in still air 60 50 K/W K/W Conditions Min Typ Max 0.5 Unit K/W
5.1 Transient thermal impedance
003aaa734
1 Zth(j-mb) (K/W) = 0.5
10-1
0.2
0.1 0.05 0.02
tp T
10
-2
P
=
single shot 10-3 10-6 10-5 10-4 10-3 10-2 10-1
tp T
t
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 14362
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 31 March 2005
4 of 14
Philips Semiconductors
BUK75/7610-55AL
N-channel TrenchMOSTM standard level FET
6. Characteristics
Table 5: Characteristics Tj = 25 C unless otherwise specified. Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 250 A; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 and 10 Tj = 25 C Tj = 175 C Tj = -55 C IDSS drain-source leakage current VDS = 55 V; VGS = 0 V Tj = 25 C Tj = 175 C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = 20 V; VDS = 0 V VGS = 10 V; ID = 25 A; Figure 6 and 8 Tj = 25 C Tj = 175 C Dynamic characteristics Qg(tot) Qgs Qgd Vplat Ciss Coss Crss td(on) tr td(off) tf Ld total gate charge gate-source charge gate-drain (Miller) charge plateau voltage input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance from drain lead 6 mm from package to center of die from contact screw on mounting base to center of die from upper edge of drain mounting base to center of die SOT404 Ls VSD trr Qr internal source inductance from source lead to source bond pad Source-drain diode source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 15 reverse recovery time recovered charge IS = 20 A; dIS/dt = -100 A/s; VGS = 0 V; VR = 30 V 0.85 73 430 1.2 V ns nC VDS = 30 V; RL = 1.2 ; VGS = 10 V; RG = 10 VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 ID = 25 A; VDD = 44 V; VGS = 10 V; Figure 14 124 22 50 5 980 560 33 117 132 95 4.5 3.5 2.5 7.5 1180 770 nC nC nC V pF pF ns ns ns ns nH nH nH nH 8.5 10 20 m m 0.05 2 10 500 100 A A nA 2 1 3 4 4.4 V V V 55 50 V V Min Typ Max Unit Static characteristics
4710 6280 pF
9397 750 14362
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 31 March 2005
5 of 14
Philips Semiconductors
BUK75/7610-55AL
N-channel TrenchMOSTM standard level FET
400 ID (A)
003aaa729
18 RDSon (m) 14
003aaa730
20 18 300 16 14 12 200
100
0 0 2 4
VGS (V) = 10 9.5 9 8.5 8 7.5 7 6.5 6 5.5 5 4.5 6 8 VDS (V) 10
10
6 5 10 15 VGS (V) 20
Tj = 25 C
Tj = 25 C; ID = 25 A
Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values.
20 RDSon (m) 15 7 8 9 10
003aaa731
Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values.
03ne89
2 a 1.5
10 VGS (V) = 20
1
5
0.5
0 0 100 200 300 ID (A) 400
0 -60
0
60
120
Tj (C)
180
Tj = 25 C
R DSon a = ----------------------------R DSon ( 25 C ) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature.
Fig 7. Drain-source on-state resistance as a function of drain current; typical values.
9397 750 14362
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 31 March 2005
6 of 14
Philips Semiconductors
BUK75/7610-55AL
N-channel TrenchMOSTM standard level FET
5 VGS(th) (V) 4 max
03aa32
10-1 ID (A) 10-2
03aa35
3
typ
10-3
min
typ
max
2
min
10-4
1
10-5
0 -60
10-6 0 60 120 Tj (C) 180 0 2 4 VGS (V) 6
ID = 1 mA; VDS = VGS
Tj = 25 C; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of junction temperature.
40 gfs (S) 35
003aaa732
Fig 10. Sub-threshold drain current as a function of gate-source voltage.
8000 C (pF) 6000
003aaa738
Ciss
30
4000
Coss
C 25 2000
rss
20 0 20 40 60 ID (A) 80
0 10-1
1
10
VDS (V)
102
Tj = 25 C; VDS = 25 V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 14362
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 31 March 2005
7 of 14
Philips Semiconductors
BUK75/7610-55AL
N-channel TrenchMOSTM standard level FET
150 ID (A) 100
003aaa733
10 VGS (V) 8 VDD = 14 V 6
003aaa735
VDD = 44 V
4 50 2 Tj = 175 C 0 0 2 4 6 8 10 VGS (V) Tj = 25 C 0 0 50 100 QG (nC) 150
VDS = 25 V
Tj = 25 C; ID = 25 A
Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values.
150 IS (A) 100
003aaa736
Fig 14. Gate-source voltage as a function of gate charge; typical values.
102 IAV (A)
003aaa739
(1)
Tj = 25 C
(2)
10
(3)
150 C
Tj = 25 C 50 Tj = 175 C 1
0 0.0
0.3
0.6
0.9
VSD (V)
1.2
10-1 10-2
10-1
1
tAV (ms)
10
VGS = 0 V
See Table note 4 of Table 3 Limiting values. (1) Single-shot. (2) Single-shot. (3) Repetitive.
Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
Fig 16. Single-shot and repetitive avalanche rating; avalanche current as a function of avalanche period.
9397 750 14362
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 31 March 2005
8 of 14
Philips Semiconductors
BUK75/7610-55AL
N-channel TrenchMOSTM standard level FET
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78
E p
A A1 q
D1
mounting base
D
L1(1)
L2 Q
L
b1
1
2
3
b c
e
e
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 A1 1.39 1.27 b 0.9 0.6 b1 1.3 1.0 c 0.7 0.4 D 15.8 15.2 D1 6.4 5.9 E 10.3 9.7 e 2.54 L 15.0 13.5 L1(1) 3.30 2.79 L2 max. 3.0 p 3.8 3.6 q 3.0 2.7 Q 2.6 2.2
Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC 3-lead TO-220AB JEITA SC-46 EUROPEAN PROJECTION ISSUE DATE 01-02-16 03-01-22
Fig 17. Package outline SOT78 (TO-220AB).
9397 750 14362 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 31 March 2005
9 of 14
Philips Semiconductors
BUK75/7610-55AL
N-channel TrenchMOSTM standard level FET
Plastic single-ended surface mounted package (D2PAK); 3 leads (one lead cropped)
SOT404
A E A1 mounting base
D1
D
HD
2
Lp
1
3
b c Q
e
e
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.50 4.10 A1 1.40 1.27 b 0.85 0.60 c 0.64 0.46 D max. 11 D1 1.60 1.20 E 10.30 9.70 e 2.54 Lp 2.90 2.10 HD 15.80 14.80 Q 2.60 2.20
OUTLINE VERSION SOT404
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 04-10-13 05-02-11
Fig 18. Package outline SOT404 (D2-PAK).
9397 750 14362 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 31 March 2005
10 of 14
Philips Semiconductors
BUK75/7610-55AL
N-channel TrenchMOSTM standard level FET
8. Mounting
10.85 10.60 10.50 1.50 7.50 7.40 1.70
2.25 2.15
8.15
8.35
8.275 1.50
4.60
0.30 4.85
5.40 8.075
7.95
3.00
0.20
solder lands solder resist occupied area solder paste 5.08
1.20 1.30 1.55
MSD057
Dimensions in mm.
Fig 19. Reflow soldering footprint for SOT404.
9397 750 14362
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 31 March 2005
11 of 14
Philips Semiconductors
BUK75/7610-55AL
N-channel TrenchMOSTM standard level FET
9. Revision history
Table 6: Revision history Release date Data sheet Change status notice Doc. number 9397 750 14362 Supersedes Document ID BUK75_7610_55AL_1
20050331 Product data sheet
9397 750 14362
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 31 March 2005
12 of 14
Philips Semiconductors
BUK75/7610-55AL
N-channel TrenchMOSTM standard level FET
10. Data sheet status
Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
III
Product data
Production
[1] [2] [3]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
11. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
13. Trademarks
TrenchMOS -- is a trademark of Koninklijke Philips Electronics N.V.
12. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors
14. Contact information
For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 14362
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 31 March 2005
13 of 14
Philips Semiconductors
BUK75/7610-55AL
N-channel TrenchMOSTM standard level FET
15. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 5.1 6 7 8 9 10 11 12 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information . . . . . . . . . . . . . . . . . . . . 13
(c) Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 31 March 2005 Document number: 9397 750 14362
Published in The Netherlands

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